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MF138900 - SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities Revision:SEMI MF1389-1115 - Superseded 1 The purpose of this

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Description

1  The purpose of this Specification is to define a standard equipment capability to report recipe step and process-related data to the factory system

SEMI E149 — Guide for Equipment Supplier-Provided Documentation for the Acquisition and Use of Manufacturing Equipment

may be produced which are not applicable to the intended application use conditions

variable items

MF138900 - SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities Revision:SEMI MF1389-1115 - Superseded 1 The purpose of thisElectronic grade polycrystalline silicon producers and users require information regarding impurities for quality assurance as well as for research and development purposes. Polysilicon is float zoned and a sample from the zoned rod is analyzed following this Test Method to obtain impurity densities that can be related to the impurity content of the starting material. Photoluminescence analysis identifies and quantifies the electrically active dopant

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